PART |
Description |
Maker |
ATF-13336 ATF-13336-STR ATF-13336-TR1 |
2-16 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-13736 ATF-13736-STR ATF-13736-TR1 |
2-16 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136 |
ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
ATF-13736 |
2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
CFY77 CFY77-08 CFY77-10 Q62702-F1559 Q62702-F1549 |
From old datasheet system AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ 0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
DC1282G DC1282H |
12 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
|
TMT-4-0504 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
PE15A1004 |
3 dB NF, 13 dBm, 12 GHz to 18 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
TLA-18-6004 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated. TELEDYNE[Teledyne Technologies Incorporated]
|
TLA-8-2013 |
Low Noise Amplifier 2 GHz - 8 GHz
|
Teledyne Technologies Incorporated. TELEDYNE[Teledyne Technologies Incorporated]
|
CLA-13-6013 |
Low Noise Amplifier 6 GHz - 13 GHz
|
Teledyne Technologies Incorporated.
|